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An application of the apertureless scanning near-field optical microscopy: Imaging a GaAlAs laser diode in operation

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3 Author(s)
Bachelot, R. ; Laboratoire de Nanotechnologie et d’Instrumentation Optique, Université de Technologie de Troyes, 12 rue Marie Curie-BP 2060-10010 Troyes Cedex, France ; Wurtz, G. ; Royer, P.

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The imaging of a commercial GaAlAs semiconductor laser emitting at 0.78 μm has been performed by apertureless scanning near-field optical microscopy using a sharp metallic tip. This tip was used as an optical and force probe simultaneously. In stimulated emission, we observed the single transverse laser mode whose dimensions are in good agreement with theoretical results. In spontaneous emission, an optical contrast linked to the known laser layers structure was observed. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 23 )