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Depth-resolved cathodoluminescence study of ZnxCd1-xSe epilayer grown on (001) InP by metal organic chemical vapor phase deposition

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3 Author(s)
Zhang, X.B. ; Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong ; Won, H.K. ; Hark, S.K.

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Optical properties of zincblende structured ZnxCd1-xSe epilayer grown on InP by metal organic chemical vapor phase deposition at temperatures of 360, 400, and 440 °C are investigated with low temperature cathodoluminescence spectroscopy (CL). Both near band gap and deep level emissions are found for the samples grown at 400 °C and above, but deep level emissions are absent for the sample grown at 360 °C. We conclude that the growth temperature should be kept below the temperature at which InP begins to decompose and diffusion of III–V constituents into the epilayer occurs. Evidence of this diffusion comes from an analysis of depth resolved CL studies, which shows that the deep level emissions occur mainly at the epilayer/substrate interface. By monitoring the ratio of the intensity of the deep level emissions to that of the near band emissions, we find that this ratio is larger for samples grown at high temperatures than those at low temperatures. Indium diffusion from the substrate into the epilayer is most likely the source of these deep levels. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 22 )

Date of Publication:

Nov 1998

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