By Topic

Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Choi, B.H. ; Department of Electronics Engineering, Korea University, Sungbukku, Anamdong, Seoul 136-701, Korea ; Hwang, S.W. ; Kim, I.G. ; Shin, H.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A quantum-dot transistor based on silicon self-assembled quantum dots has been fabricated. The device shows staircases and oscillations in the drain current at room temperature. These data are interpreted as due to single electron tunneling through the dots located in the shortest current path between the source and the drain electrodes. The dot size calculated from the data is ∼7 nm, which is consistent with the size of the self-assembled dots incorporated in the transistor. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 21 )