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Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

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6 Author(s)
Kim, Ki-Se ; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea ; Lee, Jong-Lam ; Lee, Jae Won ; Eoi Shin, Hyun
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Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9×10-2 to 4.3×10-4 Ω cm2 by the surface treatment using aqua regia. The surface treatment plays a role in removing the surface oxide formed on p-type GaN during epitaxial growth, and subsequently in reducing the barrier height for holes at the interface of Pd/p-type GaN, resulting in the good ohmic contacts to p-type GaN. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 20 )

Date of Publication:

Nov 1998

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