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The optical properties of lattice-matched GaAsSb/InGaAs/InP heterostructures with a varying InGaAs layer thickness (0–900 Å) were investigated. These structures display strong low temperature type II luminescence, the energy of which varies with the InGaAs layer thickness and ranges from 0.453 to 0.63 eV. The type II luminescence was used to determine directly and accurately the conduction band offset of these structures. The values obtained herein are 0.36 and 0.18 eV at 4.2 K for the GaAsSb/InGaAs and GaAsSb/InP heterojunctions, respectively, with the GaAsSb conduction band higher in energy. © 1998 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:73
,
Issue:
19
)
Date of Publication: Nov 1998
- Page(s):
- 2799 - 2801
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.122594
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Nov 1998
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