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1.3 μm room-temperature GaAs-based quantum-dot laser

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5 Author(s)
Huffaker, D.L. ; Department of Electrical and Computer Engineering, Microelectronics Research Center The University of Texas at Austin, Texas 78712-1084 ; Park, G. ; Zou, Z. ; Shchekin, O.B.
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Room-temperature lasing at the wavelength of 1.31 μm is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm2 is obtained at a wavelength of 1.23 μm. The room-temperature lasing at 1.31 μm is obtained with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 18 )

Date of Publication:

Nov 1998

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