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Atomic structures of hydrogen-terminated Si(001) surfaces after wet cleaning by scanning tunneling microscopy

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6 Author(s)
Endo, Katsuyoshi ; Department of Precision Science and Technology, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan ; Arima, Kenta ; Kataoka, T. ; Oshikane, Y.
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Scanning tunneling microscopy observations are performed on a H-terminated Si(001) surface treated with HF solutions and ultrapure water with very low dissolved oxygen and total organic carbon contents. Over a large area, row structures are observed in [110] and [11¯0] directions. Pyramidal-shaped etch pits are also observed, which are caused by anisotropic etching by OH ions. Detailed images clearly show 2×1 periodic structures. It is suggested that every other row of the ideally dihydride 1×1 surface is etched preferentially by OH ions. This explains the mechanism by which the smallest etch pits are formed. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 13 )

Date of Publication:

Sep 1998

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