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Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy

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3 Author(s)
Ishikawa, Tomonori ; The Femtosecond Technology Research Association (FESTA), 5-5 Tohkodai, Tsukuba, Ibaraki 300-26, Japan ; Kohmoto, Shigeru ; Asakawa, Kiyoshi

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We studied a site-control method for self-organized InAs quantum dots on GaAs substrates by a combination of in situ electron-beam (EB) lithography and molecular-beam epitaxy (MBE) using an ultrahigh-vacuum multichamber system. Small and shallow holes were patterned on a MBE-grown GaAs (001) surface by in situ EB writing and Cl2-gas etching. When more than a 1.4 monolayer of InAs was applied to the patterned surface, In(Ga)As dots were preferentially self-organized in the holes while dot formation around the holes was sufficiently suppressed. When we further increased the amount of InAs, the dots enlarged remarkably, presumably due to a stress-relaxation effect. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 12 )