Cart (Loading....) | Create Account
Close category search window
 

Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhang, Yifei ; Applied Physics Program, The University of Michigan, Ann Arbor, Michigan 48109-1120 ; Singh, J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.122209 

A formalism is developed to study transport in semiconductor devices under conditions where the Born approximation and independent scattering approximations break down. The approach based on the Kubo formalism is applied to Si metal–oxide–semiconductor field-effect transistors (MOSFETs) where interface roughness effects cause the approximations mentioned above to break down at low temperatures. Results presented are the outcome of a numerical method based on a three-dimensional approach to examine the interface roughness effects on the electronic spectrum as well as on the transport in the MOSFETs. The dependence of mobility on temperature and gate bias are reported and the shortcomings of the Born approximations are outlined. The approach is general and can be applied to problems where scattering is very strong and localization effects are significant, e.g., in amorphous semiconductor devices. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 11 )

Date of Publication:

Sep 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.