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Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection

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4 Author(s)
Yamanaka, K. ; Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minatoku, Tokyo 106, Japan ; Suzuki, K. ; Ishida, S. ; Arakawa, Y.

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We report emission from individual quantum dots excited by tunneling current injection using a scanning tunneling microscope (STM). By scanning the STM tip above the self-assembled InAs quantum dots, a spatially resolved scanning tunneling luminescence (STL) image was measured, which contained a fluorescent circular region with a diameter of 50 nm originating from a single InAs quantum dot. It was found that the spatial resolution of the STL system was about 40 nm, which is mainly due to lateral diffusion of holes injected into a GaAs capping layer grown at low temperature (480 °C). We also obtained STL spectra with a sharp single luminescent peak from a single InAs quantum dot. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 11 )

Date of Publication:

Sep 1998

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