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Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence

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5 Author(s)
Zhang, X. ; Department of Materials Science and Engineering, University of Southern California, Los Angeles, California 90089-0241 ; Rich, D.H. ; Kobayashi, J.T. ; Kobayashi, N.P.
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Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 10 )

Date of Publication:

Sep 1998

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