Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.121966
Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells (QWs). Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition fluctuations and segregation during growth. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at InN-rich centers, resulting in a strong lateral excitonic localization prior to radiative recombination. © 1998 American Institute of Physics.