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Raman studies of nitrogen incorporation in GaAs1-xNx

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7 Author(s)
Prokofyeva, T. ; Department of Physics, Texas Tech University, Lubbock, Texas 79409 ; Sauncy, T. ; Seon, M. ; Holtz, M.
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We report direct-backscattering Raman studies of GaAs1-xNx alloys, for x≤0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292 cm-1 is found to red shift at a rate of -136±10 cm-1/x. This is well described by the combined effects of strain and alloying. The GaN-like phonon near 470 cm-1 is observed to increase in intensity in direct proportion to x, and to systematically blue shift at a rate of 197±10 cm-1/x. This blue shift is likewise attributed to strain and alloying. The GaAs-like second-order features are also seen to broaden slightly and diminish in intensity with increasing nitrogen concentration. These results are attributed to a weak breakdown in the zincblende-crystal long-range order, possibly related to the presence of ordered domains within the random alloy. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 10 )