By Topic

Raman studies of nitrogen incorporation in GaAs1-xNx

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Prokofyeva, T. ; Department of Physics, Texas Tech University, Lubbock, Texas 79409 ; Sauncy, T. ; Seon, M. ; Holtz, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report direct-backscattering Raman studies of GaAs1-xNx alloys, for x≤0.03, grown on (001) GaAs. The Raman spectra exhibit a two-mode behavior. The allowed GaAs-like longitudinal-optic phonon near 292 cm-1 is found to red shift at a rate of -136±10 cm-1/x. This is well described by the combined effects of strain and alloying. The GaN-like phonon near 470 cm-1 is observed to increase in intensity in direct proportion to x, and to systematically blue shift at a rate of 197±10 cm-1/x. This blue shift is likewise attributed to strain and alloying. The GaAs-like second-order features are also seen to broaden slightly and diminish in intensity with increasing nitrogen concentration. These results are attributed to a weak breakdown in the zincblende-crystal long-range order, possibly related to the presence of ordered domains within the random alloy. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 10 )