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Charge transfer in charge-coupled devices fabricated on AlGaN/GaN heterostructures

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3 Author(s)
Chen, Q. ; APA Optics, Inc., 2950 NE 84th Lane, Blaine, Minnesota 55449 ; Blasingame, M. ; Faber, C.

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The fabrication and operation characteristics of linear array charge-coupled devices on AlGaN/GaN heterostructures are reported. In transistor mode, a three-stage device behaved as a multiple-gated field effect transistor with a transconductance of 12.8 mS/mm. In shift register mode, charge packages can be injected at one side and detected at the other side with a delay corresponding to the number of transfer electrodes of the device. At a transfer frequency of 6 MHz, the devices exhibited an estimated charge transfer efficiency of 0.94. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 10 )