By Topic

Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Willmott, P.R. ; Physikalisch-Chemisches Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland ; Antoni, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.121955 

Wurtzitic GaN films were grown by reactive crossed-beam pulsed laser deposition at 248 nm (KrF) using a liquid Ga target and a synchronous N2 pulse on atomically flat, initially two domain 2×1 reconstructed Si(001) substrates. The films were (0001) single phase for substrate temperatures between 200 and 700 °C, and also grew in a twinned epitaxial manner with the crystallites oriented parallel to the [110] and [1¯10] in-plane directions of the Si(001) substrate between 550 and 700 °C. Above 700 °C, no GaN could be detected and only Ga liquid films were produced. The films were subsequently investigated ex situ by x-ray diffraction, reflection high-energy electron diffraction, and photoluminescence. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:73 ,  Issue: 10 )