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Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2

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2 Author(s)
Willmott, P.R. ; Physikalisch-Chemisches Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland ; Antoni, F.

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Wurtzitic GaN films were grown by reactive crossed-beam pulsed laser deposition at 248 nm (KrF) using a liquid Ga target and a synchronous N2 pulse on atomically flat, initially two domain 2×1 reconstructed Si(001) substrates. The films were (0001) single phase for substrate temperatures between 200 and 700 °C, and also grew in a twinned epitaxial manner with the crystallites oriented parallel to the [110] and [1¯10] in-plane directions of the Si(001) substrate between 550 and 700 °C. Above 700 °C, no GaN could be detected and only Ga liquid films were produced. The films were subsequently investigated ex situ by x-ray diffraction, reflection high-energy electron diffraction, and photoluminescence. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 10 )