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A deep level induced by gamma irradiation in Hg1-xCdxTe

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8 Author(s)
Hu, Xinwen ; State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China ; Fang, Jiaxiong ; Wang, Qin ; Zhao, Jun
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Admittance spectroscopy and deep-level transient spectroscopy measurements have been performed on n+-on-p Hg1-xCdxTe (x=0.595) planar photodiodes grown by improved zone melt method. After 1.0 Mrads gamma irradiation, a new trap center is observed at 0.19 eV above the valence band, while the well-known 0.15 eV trap level disappears. The trap densities for these two levels are almost the same. We attribute this phenomenon to the gamma irradiation, which produces a compound defect correlated with Hg vacancy. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:73 ,  Issue: 1 )