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Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate

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3 Author(s)
Sakamoto, T. ; NEC Fundamental Research Laboratories, Tsukuba, Ibaraki 305, Japan ; Kawaura, H. ; Baba, T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.120896 

We propose doped-thin-Si-film single-electron transistors (DS-SETs), which are fabricated from a highly doped Si film in a silicon-on-insulator substate by electron-beam lithography with a high-resolution resist (calixarene) and dry etching with CF4 gas. Because the structure can be well controlled, the DS-SET with a 45-nm-diam island shows nearly ideal characteristics of SETs with a charging energy of 1.4 meV. The results demonstrate that single-electron tunneling occurs through a single island without any isolated islands formed in potential fluctuations. We also discuss the discreteness of energy levels in a Si island. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 7 )

Date of Publication:

Feb 1998

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