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Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs

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4 Author(s)
Darmo, J. ; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovak Republic ; Dubecky, F. ; Kordos, P. ; Forster, A.

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A deep-level donor state with signatures similar to the EL6 level observed in low-temperature-grown molecular beam epitaxial (MBE) GaAs grown at 250 °C and annealed in the temperature range 310–370 °C was studied. The annealing kinetics of this level suggest a confined pair recombination, likely VGa and Asi. A correlation between the deep level observed and recently published photoluminescence data of low-temperature-grown MBE GaAs is found. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 5 )