IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:72 Issue:5 Help

Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Darmo, J. ; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovak Republic ; Dubecky, F. ; Kordos, P. ; Forster, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.120815 

A deep-level donor state with signatures similar to the EL6 level observed in low-temperature-grown molecular beam epitaxial (MBE) GaAs grown at 250 °C and annealed in the temperature range 310–370 °C was studied. The annealing kinetics of this level suggest a confined pair recombination, likely VGa and Asi. A correlation between the deep level observed and recently published photoluminescence data of low-temperature-grown MBE GaAs is found. © 1998 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:72 ,  Issue: 5 )

Date of Publication: Feb 1998

Page(s):
590 - 592
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.120815
Date of Current Version :
18 June 2009
Issue Date :
Feb 1998

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.