By Topic

Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Darmo, J. ; Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84239 Bratislava, Slovak Republic ; Dubecky, F. ; Kordos, P. ; Forster, A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A deep-level donor state with signatures similar to the EL6 level observed in low-temperature-grown molecular beam epitaxial (MBE) GaAs grown at 250 °C and annealed in the temperature range 310–370 °C was studied. The annealing kinetics of this level suggest a confined pair recombination, likely VGa and Asi. A correlation between the deep level observed and recently published photoluminescence data of low-temperature-grown MBE GaAs is found. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 5 )