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High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor

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8 Author(s)
Kim, H.J. ; Division of Electronics and Information Technology, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea ; Kim, D.M. ; Woo, D.H. ; Kim, S.I.
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In this letter, we report the electrical and optical characteristics of p-channel In0.13Ga0.87As double heterojunction pseudomorphic modulation-doped field effect transistor (MODFET) structure grown by gas source molecular beam epitaxy. The Hall mobility and the density of 2-DHGs (two-dimensional hole gases) in the pseudomorphic In0.13Ga0.87As channel were measured to be 250 cm2/V s and 1.9×1012cm-2 at 300 K, and 5800 cm2/V s and 1.5×1012cm-2 at 23 K, respectively. The fabricated p-channel MODFET shows a good mobility property which is due to high valence band discontinuity of InGaP/GaAs/InGaAs double barriers. The peak energy in the photoluminescence spectrum from the p-channel pseudomorphic MODFET structure was found to be 1.4 eV (λ=881 nm). The photoresponsivity with this modified pseudomorphic MODFET structure shows outstandingly better than that of a pin photodiode, particularly at low incident optical power. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:72 ,  Issue: 5 )