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Visible-blind GaN Schottky barrier detectors grown on Si(111)

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10 Author(s)
Osinsky, A. ; APA Optics Inc., Blaine, Minnesota 55449 ; Gangopadhyay, S. ; Yang, J.W. ; Gaska, R.
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We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a -4 V bias. The dark current is ∼60 nA at -2 V bias. The noise equivalent power is estimated to be 3.7×10-9W over the response bandwidth of 2.2 MHz. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:72 ,  Issue: 5 )