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Optical mixing to 211 GHz using 50 nm gate pseudomorphic high electron mobility transistors

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4 Author(s)
Ali, M.E. ; Department of Electrical Engineering, University of California, Los Angeles, California 90095 ; Bhattacharya, D. ; Fetterman, H.R. ; Matloubian, M.

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We report optical mixing with difference frequencies to 211 GHz in 50 nm gate pseudomorphic InP-based high electron mobility transistors (HEMTs). To our knowledge, this is the highest frequency optical mixing signal obtained in three terminal devices. To detect the signals at these frequencies, a novel three-wave-mixing configuration was employed. To demonstrate the wide tunability of this setup, a sweep of frequencies from 160 to 190 GHz was performed. The optically generated millimeter wave signals were downconverted to 97 GHz and radiated. For the radiation experiments, tunable baseband signals were also added by injection into the gate terminal of our HEMTs, thereby providing a method to transmit information. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 4 )