Cart (Loading....) | Create Account
Close category search window
 

Recombination lifetime of In0.53Ga0.47As as a function of doping density

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ahrenkiel, R.K. ; National Renewable Energy Laboratory, Golden, Colorado 80401 ; Ellingson, R. ; Johnston, S. ; Wanlass, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.121669 

We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019cm-3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley–Read–Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 26 )

Date of Publication:

Jun 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.