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Browse Journals & Magazines > Applied Physics Letters ...> Volume:72 Issue:24 Help

Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

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12 Author(s)
Peng, C.S. ; Institute of Physics & Center of Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603 (36), Beijing 100080, People’s Republic of China ; Zhao, Z.Y. ; Chen, H. ; Li, J.H.
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Relaxed GexSi1-x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi1-y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5×106 cm-2 in the top layers, while the total thickness of the structure is no more than 1.7 μm. © 1998 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:72 ,  Issue: 24 )

Date of Publication: Jun 1998

Page(s):
3160 - 3162
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.121579
Date of Current Version :
18 June 2009
Issue Date :
Jun 1998

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