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Dynamics of infrared absorption caused by hydroxyl groups and its effect on refractive index evolution in ultraviolet exposed hydrogen loaded GeO2-doped fibers

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4 Author(s)
Araujo, F.M. ; Unidade de Optoelectrónica, INESC-Porto, R. Campo Alegre, 687, 4150-Porto, Portugal ; Joanni, E. ; Marques, M.B. ; Okhotnikov, O.G.

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The growth dynamics of UV induced IR absorption and related refractive index change in hydrogen loaded GeO2-doped fibers have been studied. We report a higher initial rate and strong saturation for Ge–OH generation compared with Si–OH formation under UV exposure. A close correlation was found between the Ge/Si–OH groups concentration and the induced index change as a function of the UV exposure time. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:72 ,  Issue: 24 )