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Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsPg=1.05 μm):Fe optical waveguides for integrated photonic devices

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8 Author(s)
Kunzel, H. ; Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, Einsteinufer 37, D-10587 Berlin, Germany ; Albrecht, P. ; Ebert, S. ; Gibis, R.
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Iron doping of InP and GaInAsPg=1.05 μm) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneous incorporation behavior of the iron dopant in the materials investigated. Resistivities in excess of 109 Ω cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 °C—the minimum temperature necessary for selective deposition—exhibited averaged resistivities of 5×107 Ω cm in combination with optical losses of 2.5±0.5 dB/cm. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:72 ,  Issue: 23 )