Iron doping of InP and GaInAsP(λg=1.05 μm) layers grown by metalorganic molecular beam epitaxy was studied using elemental source material in combination with a conventional effusion cell. This study was aimed at the creation of semi-insulating optical waveguides under growth conditions compatible with selective area growth. Secondary ion mass spectroscopy measurements revealed a reproducible and homogeneous incorporation behavior of the iron dopant in the materials investigated. Resistivities in excess of 109 Ω cm were obtained for both compositions at medium doping levels. GaInAsP/InP waveguide structures grown at 485 °C—the minimum temperature necessary for selective deposition—exhibited averaged resistivities of 5×107 Ω cm in combination with optical losses of 2.5±0.5 dB/cm. © 1998 American Institute of Physics.