Cart (Loading....) | Create Account
Close category search window
 

Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chiang, C.-S. ; Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 ; Chen, Chun-ying ; Kanicki, Jerzy ; Takechi, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.121484 

We use a new hydrogenated amorphous silicon (a-Si:H) device structure, the gated-four-probe a-Si:H thin-film transistor (TFT), to investigate the intrinsic channel characteristics of inverted-staggered a-Si:H TFTs without the influence of source/drain series resistances. The experimental results have shown that, for the conventional a-Si:H TFT structure, the field-effect mobility, threshold voltage, and field-effect channel conductance activation energy have a strong dependence on a-Si:H thickness and TFT channel length. On the other hand, for the gated-four-probe a-Si:H TFT structure, these values are a-Si:H thickness and TFT channel length independent, clearly indicating that this new a-Si:H TFT structure can be effectively used to measure the channel intrinsic properties of a-Si:H TFTs. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 22 )

Date of Publication:

Jun 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.