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Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure

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4 Author(s)
Chiang, C.-S. ; Center for Display Technology and Manufacturing, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 ; Chen, Chun-ying ; Kanicki, Jerzy ; Takechi, K.

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We use a new hydrogenated amorphous silicon (a-Si:H) device structure, the gated-four-probe a-Si:H thin-film transistor (TFT), to investigate the intrinsic channel characteristics of inverted-staggered a-Si:H TFTs without the influence of source/drain series resistances. The experimental results have shown that, for the conventional a-Si:H TFT structure, the field-effect mobility, threshold voltage, and field-effect channel conductance activation energy have a strong dependence on a-Si:H thickness and TFT channel length. On the other hand, for the gated-four-probe a-Si:H TFT structure, these values are a-Si:H thickness and TFT channel length independent, clearly indicating that this new a-Si:H TFT structure can be effectively used to measure the channel intrinsic properties of a-Si:H TFTs. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 22 )

Date of Publication:

Jun 1998

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