By Topic

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Li, J.Z. ; Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 ; Lin, J.Y. ; Jiang, H.X. ; Khan, M.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.121485 

Photocurrent (PC) transient characteristics of an AlGaN/GaN heterostructure UV detector have been studied. We observed that the PC transients of the AlGaN/GaN heterostructure depended strongly on its initial conditions. Under a pulsed laser excitation, the PC responsivity, dark current level, and decay time constant all increased progressively with the number of successive excitation pulses and eventually saturated at constant values after about 30 pulsed laser exposures. Our results indicate that the observed PC transient characteristics are directly correlated with the effect of persistent photoconductivity in the two-dimensional electron gas region caused by deep level impurities and can have a significant influence on the performance of the UV photodetectors based on AlGaN/GaN heterostructures. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 22 )