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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

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12 Author(s)
Nakamura, Shuji ; Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan ; Senoh, Masayuki ; Nagahama, Shin‐ichi ; Iwasa, Naruhito
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InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 μm etching of the ELOG substrate, the etch pit density was about 2×108 cm2 in the region of the 4-μm-wide stripe window, but almost zero in the region of the 7-μm-wide SiO2 stripe. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 2 )

Date of Publication:

Jan 1998

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