By Topic

Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Li, Hanxuan ; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China ; Wu, Ju ; Xu, Bo ; Liang, Jiben
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [11¯0] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 17 )