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Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

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12 Author(s)
Nakamura, Shuji ; Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan ; Senoh, Masayuki ; Nagahama, Shin‐ichi ; Iwasa, Naruhito
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InGaN multi-quantum-well-structure laser diodes (LDs) grown on GaN substrates were demonstrated. The LDs showed a small thermal resistance of 30 °C/W and a lifetime longer than 780 h despite a large threshold current density of 7 kA/cm2. In contrast, the LDs grown on a sapphire substrate exhibited a high thermal resistance of 60 °C/W and a short lifetime of 200 h under room-temperature continuous-wave operation. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:72 ,  Issue: 16 )