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Browse Journals & Magazines > Applied Physics Letters ...> Volume:72 Issue:16 Help

The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures

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4 Author(s)
Kulik, L.V. ; Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 ; Hits, D.A. ; Dashiell, M.W. ; Kolodzey, J.

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The thermal stability of molecular beam epitaxy grown Si1-x-yGexCy/Si heterostructures (0≤x≪0.30, y∼0.008) was studied using infrared absorption spectroscopy. The local vibrational mode of C in Si and Si1-x-yGex was used to quantify the loss of C atoms from substitutional sites with high temperature annealing. The activation energy (Ea=4.9 eV) for the loss of substitutional C achieved a maximum for the strain compensated alloy (x∼0.1). An additional increase of Ge content resulted in a rapid decrease in Ea, which was found to be 3.4 eV for x∼0.27. The nonmonotonic behavior of Ea on Ge content is explained by the effect of the interface strain between the epitaxial layer and Si substrate. © 1998 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:72 ,  Issue: 16 )

Date of Publication: Apr 1998

Page(s):
1972 - 1974
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.121238
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 1998

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