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A comparative study of uniaxial pressure effects in intraband AlGaAs/GaAs and interband InAs/AlSb/GaSb resonant tunneling diodes

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5 Author(s)
Mutamba, K. ; Institut für Hochfrequenztechnik, Technische Universität Darmstadt, D-64283 Darmstadt, Germany ; Sigurdardottir, A. ; Vogt, A. ; Hartnagel, H.L.
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We report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current–voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure device types as well as their pressure dependencies. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 13 )