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We report on the effects of uniaxial pressure on (001)-oriented AlGaAs/GaAs and InAs/AlSb/GaSb double barrier resonant tunneling diodes (RTDs). The current–voltage characteristics of the AlGaAs/GaAs RTDs shift asymmetrically due to stress-induced piezoelectric fields in the barriers and well structures. Although all the materials involved are piezoelectric, the interband InAs/AlSb/GaSb resonant tunneling device surprisingly shows, in contrast to the AlGaAs/GaAs one, a symmetrical behavior for the same orientation [110] of the applied pressure. We explain the observed differences considering the different tunneling paths involved in the conduction mechanism of the two heterostructure device types as well as their pressure dependencies. © 1998 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:72
,
Issue:
13
)
Date of Publication: Mar 1998
- Page(s):
- 1629 - 1631
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.121135
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Mar 1998
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