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Lattice parameter in Si1-yCy epilayers: Deviation from Vegard’s rule

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8 Author(s)
Berti, M. ; INFM at the Physics Department, University of Padova, Via Marzolo 8, 1-35131 Padova, Italy ; De Salvador, D. ; Drigo, A.V. ; Romanato, F.
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The precise C content of a series of Si1-yCy epilayer samples (0≪y≪0.012) was determined by resonant backscattering experiments using a 4He+ ion beam at 5.72 MeV. This beam energy is more suitable for the determination of the C content than the previously used 4.265 MeV. From the correlation of these investigations with x-ray diffraction experiments, a significant deviation of the lattice parameter variation in Si1-yCy from Vegard’s rule between Si and diamond or β-SiC was observed, which amounts up to 30% or 13%, respectively, for y≪0.012. This negative deviation is in agreement with recent theoretical predictions by Kelires. © 1998 American Institute of Physics.

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Applied Physics Letters  (Volume:72 ,  Issue: 13 )