By Topic

Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Gurtovoi, V.L. ; Institute of Microelectronics Technology, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia ; Valyaev, V.V. ; Shapoval, S.Yu. ; Pustovit, A.N.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.121013 

Electron transport properties of double delta-doped GaAs structures based on high electron mobility single delta-doped layers with a sheet concentration of 3×1012cm-2 have been investigated for spacer thicknesses up to 1100 Å at 77 and 300 K. At an optimized spacer thickness of about 200 Å, a maximum in conductivity is observed, which exceeds the conductivity of a single delta-doped layer with the same total concentration by 30% and 20% at 300 and 77 K. The mobility and concentration as a function of spacer thickness are also presented and analyzed. © 1998 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:72 ,  Issue: 10 )