By Topic

A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hasani, F. ; Device Modelling & Simulation Lab., Univ. of Tehran, Tehran ; Fathipour, M. ; Karimi, F.

As integrated circuits (ICs) become more densely packed with transistors, the conventional MOSFETs approach their physical limits of operation. Thus many novel device structures are being extensively explored. As a substitute Ultra thin Nano scale MOSFETs are one of the potential candidates. It is very attractive one-dimensional material and is useful for future nanoelectronic applications. We have used quantum transport to investigate the effect of scattering due to coupling of the gate contact on the gate tunnelling current. We have developed a proper self energy term which is included within the Hamiltonian formalism for the Poisson Schrodinger solver. It will manifest the coupling of scattering parameter on the gate tunnelling current.

Published in:

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Date of Conference:

18-20 March 2009