Skip to Main Content
We have compared the thermal and electrical characteristics for two types of Ultra Thin Body-Silicon-On-Insulator (UTB SOI MOSFET) with having a step Buried Oxide (BOX) with these of conventional (UTB SOI) MOSFET. It is demonstrated that self-heating and short channel such as drain induced barrier lowering (DIBL) effects can be improved in UTB SOI with a step BOX without any increase in source capacitance . However employing a non-uniform BOX leads to an increase subthreshold swing (SS) and gate capacitance when the step BOX employed is located at source end. UTB devices with step BOX at the end source exhibit better thermal stability compared UTB SOI with step BOX at the drain. However gate capacitance and SS for the device with the step BOX at the drain end are lower than these of the one with step BOX at source.