Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Nanoscale Ultra Thin Body-Silicon-On-Insulator field effect transistor with step BOX: Self-heating and short channel effects)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ghanatian, H. ; Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran ; Fathipour, M. ; Talebi, H.

We have compared the thermal and electrical characteristics for two types of Ultra Thin Body-Silicon-On-Insulator (UTB SOI MOSFET) with having a step Buried Oxide (BOX) with these of conventional (UTB SOI) MOSFET. It is demonstrated that self-heating and short channel such as drain induced barrier lowering (DIBL) effects can be improved in UTB SOI with a step BOX without any increase in source capacitance . However employing a non-uniform BOX leads to an increase subthreshold swing (SS) and gate capacitance when the step BOX employed is located at source end. UTB devices with step BOX at the end source exhibit better thermal stability compared UTB SOI with step BOX at the drain. However gate capacitance and SS for the device with the step BOX at the drain end are lower than these of the one with step BOX at source.

Published in:

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Date of Conference:

18-20 March 2009