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Interfacial and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3

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6 Author(s)
Xinhong Cheng ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Changning Road 865, 200050, China ; Dawei He ; Zhaorui Song ; Yuehui Yu
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HfO2 gate dielectric films with a blocking layer of Al2O3 inserted between HfO2/Si were treated with rapid thermal annealing process at 700degC. The interfacial structure and electrical properties are reported. X-ray photoelectron spectroscopy indicated that the interfacial layer of SiOx transformed into SiO2 after the annealing treatment, and Hf-silicates and Hf-silicides were not detected. High-resolution transmission electron microscopy showed that the interfacial layer was composed of SiO2 for the annealed film with a blocking layer. The electrical measurements indicated that the equivalent oxide thickness decreased to 2.5 nm and the fixed charge density decreased to -4.5times1011/cm2 in comparison with the same thickness of HfO2 films without the blocking layer. Al2O3 layer could effectively prevent the diffusion of Si into HfO2 film and improve the interfacial and electrical performance of HfO2 film.

Published in:

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Date of Conference:

18-20 March 2009