IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Conference Publications > Ultimate Integration of Silic ... Help

Impact of sputter deposited TaN and TiN metal gates on ZrO2/Ge and ZrO2/Si high-k dielectric gate stacks

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Henkel, C. ; Inst. for Solid State Electron., Vienna Univ. of Technol., Vienna ; Abermann, S. ; Bethge, O. ; Klang, P.
more authors

We investigated the impact of rf-magnetron sputter deposited TaN and TiN gate electrodes on high-k metal gate stacks to be applied in future CMOS technology. As substrate materials germanium and silicon were studied. The effective work function for TiN and TaN films on ZrO2//Si was determined to be 4.6 eV in case of TaN, and 4.5 eV in case of TiN. Thermal stability of the final gate stacks was given upon annealing to temperatures of 500degC.

Published in:
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Date of Conference: 18-20 March 2009

Page(s):
197 - 200
Print ISBN:
978-1-4244-3704-7
INSPEC Accession Number:
10626250
Conference Location :
Aachen
Digital Object Identifier :
10.1109/ULIS.2009.4897570
Product Type:
Conference Publications

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.