By Topic

A comparative study of non-melt laser spike annealing and flash lamp annealing in terms of transistor performance and pattern effects on SOI-CMOSFETs for the 32 nm node and below

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Illgen, R. ; Dept. of Electr. Eng., Univ. of Appl. Sci. Dresden, Dresden ; Flachowsky, S. ; Herrmann, T. ; Feudel, T.
more authors

Due to the continuous CMOS transistor scaling requirements, millisecond annealing has been introduced in 45 nm CMOS technology to enhance dopant activation with minimal dopant diffusion. This paper considers two different ultra fast annealing technologies as alternative to the conventional rapid thermal annealing strategy for the 32 nm node. We compared a long wavelength non-melt laser spike annealing and a flash lamp annealing in terms of CMOSFET device performance. We also investigated possible temperature variations induced by shallow trench isolation density variations of these two annealing techniques by means of electrical parameters. The comparison was made without the introduction of an absorbent layer to take into account the different absorption mechanism between laser spike annealing and flash lamp annealing. The results show that both approaches despite their different annealing techniques are full comparable in terms of device performance without any concerns in pattern effects at least for SOI-CMOSFETs and therefore equal useable for the 32 nm node and beyond.

Published in:

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Date of Conference:

18-20 March 2009