By Topic

Exhaustive experimental study of tunnel field effect transistors (TFETs): From materials to architecture

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Le Royer, C. ; CEA-LETI Minatec, Grenoble ; Mayer, F.

The goal of this paper is to present and to analyze the tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-ldquokT/qrdquo swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose we report on experimental results on SOI, Si1-xGexOI & GeOI TFETs, fabricated using a fully depleted SOI CMOS process flow with high-k & metal gate stack.

Published in:

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Date of Conference:

18-20 March 2009