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The goal of this paper is to present and to analyze the tunnel FET and its specific properties (small subthreshold swing, very low OFF currents). We investigate the opportunities offered by this sub-ldquokT/qrdquo swing device and review the issues that TFET has to overcome (ambipolar behaviour, low ON current) for future circuit applications. For that purpose we report on experimental results on SOI, Si1-xGexOI & GeOI TFETs, fabricated using a fully depleted SOI CMOS process flow with high-k & metal gate stack.
Date of Conference: 18-20 March 2009