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Optimization of InGaN–GaN MQW Photodetector Structures for High-Responsivity Performance

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7 Author(s)
Pereiro, J. ; Inst. for Syst. based on Optoelectron. & Microtechnol., Polytech. Univ. of Madrid, Madrid ; Rivera, C. ; Navarro, A. ; Muoz, E.
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InGaN-GaN multiple-quantum-well (MQW)-based photodetectors, with a detection edge at 450 nm and a high responsivity, have been fabricated and characterized. We show that the performance of MQW-based photodetectors strongly depends on a proper device design, i.e., number of QWs, and barrier and blocking layer thickness and doping level. Namely, the responsivity can be varied in the ~ 1 to ~ 100 mA/W range in similar structures and with the same number of QWs. These results support a model where the photocurrent increase is due to the improvement of collection efficiency caused by a change in transport mechanism for carriers photogenerated in the QWs. The transport mechanism depends on the location of the QWs in relation to the depletion region.

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Quantum Electronics, IEEE Journal of  (Volume:45 ,  Issue: 6 )