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On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells

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2 Author(s)
Pinault, M.-A. ; Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA/CNRS), Rue Bernard Grégory, Parc Sophia Antipolis, F-06560 Valbonne, France ; Tournie, E.

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We have investigated by temperature-dependent photoluminescence (PL) spectroscopy as-grown GaInNAs, InGaAs, and GaAsN quantum wells (QWs) embedded in a GaAs matrix. The evolution of the PL peak position and of the PL linewidth shows evidence of a strong carrier localization for the GaInNAs QWs only. The high delocalization temperature, in the 150 K range, indicates the presence of a high density of possibly deep-localizing potential wells. In addition, a higher density of nonradiative recombination centers appears to result in stronger carrier localization. Transmission electron microscopy reveals well defined, flat interfaces, in these comparatively high N-content (yN∼0.04–0.05) QWs. Our results thus demonstrate that the origin of localization in GaInNAs QWs is the concomitant presence of both In and N, which may result in strain and/or composition fluctuations. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 11 )