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Imaging of trapped charge in SiO2 and at the SiO2–Si interface

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2 Author(s)
Ludeke, R. ; IBM T. J. Watson Research Center, P.O. Box 218 Yorktown Heights, New York 10598 ; Cartier, E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1380396 

Charged defects in SiO2 and at the SiO2–Si(111) interface were imaged with a noncontact atomic force microscope. Electrons and holes trapped at interfacial Pb centers in n- and p-type samples were identified from simultaneously recorded Kelvin images. Limited trap occupancy, determined by the local, bias controlled Fermi level, and strong band bending lead to unusually sharp images of trapped charge. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 25 )