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Browse Journals & Magazines > Applied Physics Letters ...> Volume:78 Issue:24 Help

Interface engineering of a ZrO2/SiO2/Si layered structure by in situ reoxidation and its oxygen-pressure-dependent thermal stability

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1 Author(s)
Watanabe, H. ; Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

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Reactions at ZrO2/SiO2/Si interfaces during fabrication and postannealing have been studied in detail. The layered structures were fabricated by deposition of a thin Zr layer on a chemical oxide, followed by oxidation in an UHV chamber without air exposure (i.e., in situ reoxidation). On-line x-ray photoelectron spectroscopy was used to show that in situ reoxidation can be used for precisely designing interfacial structures. It was found that the thermal stability of ZrO2/SiO2/Si interfaces crucially depends on oxygen ambient; that is, while the interfaces are stable up to 900 °C under UHV conditions, annealing in 1×10-4 Torr oxygen results in formation of interfacial Zr silicate. Moreover, the ZrO2 overlayer was found to accelerate the interfacial oxidation reaction. © 2001 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:78 ,  Issue: 24 )

Date of Publication: Jun 2001

Page(s):
3803 - 3805
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1379357
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2001

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