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Browse Journals & Magazines > Applied Physics Letters ...> Volume:78 Issue:22 Help

Ultrafast carrier relaxation in radiation-damaged silicon on sapphire studied by optical-pump–terahertz-probe experiments

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2 Author(s)
Lui, K.P.H. ; Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2JI ; Hegmann, F.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1375841 

We investigate the relaxation of photogenerated carriers in radiation-damaged silicon on sapphire using a collinear optical-pump–terahertz-probe arrangement. Carrier densities greater than 1020 cm-3 are injected using 400 nm, 100 fs pump pulses, and the change in transmission of the terahertz-probe pulse is measured as a function of pump–probe delay. The time-dependent carrier density is deduced using a thin-film Drude model. A carrier mobility of 422±17 cm2/V s is measured, and single-exponential carrier relaxation times of 4 ps at low fluence and 6 ps at high fluence are observed. © 2001 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:78 ,  Issue: 22 )

Date of Publication: May 2001

Page(s):
3478 - 3480
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.1375841
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2001

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