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Ballistic transport in a GaAs/AlxGa1-xAs one-dimensional channel fabricated using an atomic force microscope

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6 Author(s)
Curson, N.J. ; Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom ; Nemutudi, R. ; Appleyard, N.J. ; Pepper, M.
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We fabricate a one-dimensional constriction in a shallow, δ-doped GaAs/AlxGa1-xAs two-dimensional electron gas, by locally oxidizing the surface using an atomic force microscope. The channel exhibits ballistic conduction with up to seven conductance plateaus, quantized in units of 2e2/h. The dependence of the device conductance on dc bias voltage reveals the energy separation of the first two subbands to be ΔE1,2=5.5(±0.3) meV, which allows ballistic conduction to be observed up to a temperature of 20 K. A lateral electric field, combined with the hard-walled confinement due to the insulating lines, allows manipulation of the electron wave function in a way which is not possible with surface-gated devices. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 22 )