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Growth of epitaxial germanium films on silicon using hot-wire chemical vapor deposition

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3 Author(s)
Mukherjee, C. ; Department of Physics and Center of Materials Research, University of Kaiserslautern, P.O. Box 3049, D-67653 Kaiserslautern, Germany ; Seitz, H. ; Schroder, B.

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We report the epitaxial growth of germanium (Ge) films from germane gas at low substrate temperature of 350 °C and deposition rates up to 3 Å/s on crystalline silicon (Si) using hot-wire chemical vapor deposition. In situ kinetic ellipsometry measurements reveal that deposition rate is very critical to obtain thick epitaxial films. Cross-sectional transmission electron microscopy and spectroscopic ellipsometry measurements yield growth of epitaxial Ge layer with 98% crystalline fraction. Epitaxy was also confirmed by x-ray diffraction measurements and lattice stress in the epilayer is estimated. Raman measurements also reflect growth of crystalline Ge films without Si impurities. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 22 )