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Suppression of phase separation in (AlAs)2 ML(InAs)2 ML superlattices using Al0.48In0.52As monolayer insertions

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3 Author(s)
Lee, S.R. ; Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 ; Reno, J.L. ; Follstaedt, D.M.

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Al0.48In0.52As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)2 ML(InAs)2 ML short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al0.48In0.52As interlayers greater than 2 ML thick tends to suppress the phase separation that normally occurs during molecular beam epitaxy of the SPS. The degree of suppression is a sensitive function of both the monolayer-scale thickness, and the intraperiod growth sequence, of the interlayers in the SPS. Given this sensitivity to monolayer-scale variations in the surface-region composition, we propose that cyclical phase transition of the reconstructed surface initiates SPS decomposition. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 22 )

Date of Publication:

May 2001

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