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Vertical p-type high-mobility heterojunction metal–oxide–semiconductor field-effect transistors

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5 Author(s)
Chen, Xiangdong ; Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 ; Qiqing Ouyang ; Jayanarayanan, Sankaran Kartik ; Prins, Freek E.
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We have fabricated a vertical p-channel metal–oxide–semiconductor field-effect transistor called high-mobility heterojunction transistor (HMHJT). Compared with a Si control device, reduced short channel effects, reduced floating body effect, and high drive current have been achieved with this device structure. A SiGe/Si heterojunction barrier at the source/bulk junction suppresses drain induced barrier lowering and bulk punchthrough, which are significant problems for sub-100 nm devices. A SiGe source also helps to reduce the charge built-up in the floating body. The higher mobility in a strained SiGe channel and the absence of a hetero-barrier between the source and channel result in higher drive current. The fabricated HMHJT has a 60% higher drive current at VDS=VGS-VT=-1.6 V, and a 70× lower off-state leakage current at VDS=-1.6 V and VGS=0.0 V, compared with the Si control device. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 21 )

Date of Publication:

May 2001

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