Cart (Loading....) | Create Account
Close category search window

Vertical p-type high-mobility heterojunction metal–oxide–semiconductor field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chen, Xiangdong ; Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 ; Qiqing Ouyang ; Jayanarayanan, Sankaran Kartik ; Prins, Freek E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have fabricated a vertical p-channel metal–oxide–semiconductor field-effect transistor called high-mobility heterojunction transistor (HMHJT). Compared with a Si control device, reduced short channel effects, reduced floating body effect, and high drive current have been achieved with this device structure. A SiGe/Si heterojunction barrier at the source/bulk junction suppresses drain induced barrier lowering and bulk punchthrough, which are significant problems for sub-100 nm devices. A SiGe source also helps to reduce the charge built-up in the floating body. The higher mobility in a strained SiGe channel and the absence of a hetero-barrier between the source and channel result in higher drive current. The fabricated HMHJT has a 60% higher drive current at VDS=VGS-VT=-1.6 V, and a 70× lower off-state leakage current at VDS=-1.6 V and VGS=0.0 V, compared with the Si control device. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 21 )

Date of Publication:

May 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.