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Optimization of electronic-band alignments at ferroelectric (ZnxCd1-x)S/Si(100) interfaces

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5 Author(s)
Hotta, Y. ; Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan ; Rokuta, E. ; Tabata, H. ; Kobayashi, H.
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We have obtained ferroelectric characteristics from nonoxide (ZnxCd1-x)S (x=0.1–0.3) thin films. On the basis of x-ray photoelectron and visible–ultraviolet light absorption spectroscopy measurements, the conduction-band discontinuity at the (ZnxCd1-x)S/Si(100) interfaces is found to vary between 0.4 and 1.3 eV with a change in composition x between 0.1 and 0.9. The leakage current density, which strongly depends on the conduction-band discontinuity, is reduced to less than 10-6A/cm2 at a gate voltage of 4 V. © 2001 American Institute of Physics.

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Applied Physics Letters  (Volume:78 ,  Issue: 21 )