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Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP

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6 Author(s)
Lee, A.S.W. ; Center for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada ; MacKenzie, M. ; Thompson, D.A. ; Bursik, J.
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Photoluminescence and cross-sectional transmission electron microscopy, combined with x-ray compositional analysis, have been used to study quantum well intermixing in an InGaAsP quantum well laser structure. Quantum well intermixing is induced by capping the samples with a layer of InP grown at low temperature (300 °C) and subjecting them to rapid thermal anneal treatments in the temperature range 600–800 °C. The presence of the low temperature InP layer, which contains an abundance of nonequilibrium point defects, significantly enhances the intermixing on annealing, producing a large band-gap blueshift. The microscopy results show good broadening with smeared interfaces, and the compositional analysis suggests this can be attributed to the intermixing of group V atoms. © 2001 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:78 ,  Issue: 21 )

Date of Publication:

May 2001

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